T, JUNCTION T EMPERATURE (☌) J Figure 3. They can be used in most applications requiring up to 400mA DC and can deliver pulsed currents. These products have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance. NDS7002A N-Channel Enhancement Mode Field Effect Transistor General Description These N-Channel enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. 400 200 30 3.2 Derated above 25☌ 1.6 2.e T,T Operating and Storage Temperature Range -55 to 150 -65 to J STG Maximum Lead Temperature for Soldering Purposes, 1/16' from Case for 10 Seconds TL 300 THERMAL CHARACTERI STICS Thermal Resistance, Junction-to-Ambient 312. VDD 6V Rp 31000 100KΩ R, Cc 0.1pF Cc Q1 2N7000 0.1pF R2 RL 22KO 56k0 Rs$ 220 C47F Figure 1: Common-source MOSFET Configurationĭ Go TO-92 SOT-23 2N7000 (TO-236AB) 2N7002/NDS7002A Absolute Maximum Ratings 25 C unless otherwise noted T Symbol Parameter 2N7000 2N7002 NDS7 Drain-Source Voltage V 60 DSS VDGR Drain-Gate Voltage (R s1 M2) 60 Vass Gate-Source Voltage Continuous +20 Non Repetitive (tp < 50ps) +40 m Drain Current Continuous Max 200 115 28- Pulsed 500 800 150 Maximum Power Dissipation P. Show all your calculations on the next page. Ce and Cs are called coupling capacitor and shunt capacitor respectively.

2) Perform de-analysis of the circuit below and determine the Q-point (Ip, Vcs.

Show all your calculations in the space below. Similarly, Ip information can be found under the devices 'ON Characteristics' Ip(ON). Use typical values from spec sheet when given a Min, Typ, and Max values.

Note: VTN is represented as Ves(th) in spec sheet. Using the data provided, estimate a value for Kn.

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